| 摘要 |
PROBLEM TO BE SOLVED: To provide an etching method capable of etching a silicon part of a substrate to be processed, at a high etching rate and a high selection ratio by means of dry etching using no plasma.SOLUTION: In an etching method for selectively etching a silicon part existing on a surface of a substrate W to be processed, a substrate W to be processed is disposed in a chamber 40, FNO gas and Fgas are diluted with Ngas, which is inert gas, to be supplied in the chamber 40, and FNO gas and Fgas are reacted with a silicon part on a surface of the substrate W to be processed. |
