METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR, AND GROUP III NITRIDE SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing a flat group III nitride semiconductor which has small penetration dislocation.SOLUTION: A first stripe structure 100 in a first direction and a second stripe structure 101 in a second direction are formed on a main surface of a substrate. A first processing side face 100aa as a side face of a recessed part of the first stripe structure 100 is so formed that a plane most parallel with the first processing side face 100aa among low-index planes of a group III nitride semiconductor to be grown is an "m" plane (10-10), and the first angle &thetas;1 contained between a first side face vector obtained by orthogonally projecting a normal vector of the first processing side face 100aa on the main surface and an "m"-axial projection vector obtained by orthogonally projecting a normal vector of the "m" plane of the semiconductor to be grown on the main surface is 0.5-6°. The second stripe structure 101 is also so formed similarly that a plane most parallel with a second processing side face 101aa is an "a" plane (11-20) and the second angle contained between a second side face vector and an "a"-axial projection vector is 0-10°.