| 摘要 |
<p>A semiconductor plasma processing apparatus includes: a vacuum chamber which processes semiconductor substrates; a process gas source which is fluid-connected to the vacuum chamber and supplies process gas into the vacuum chamber; and an RF energy source which energizes the process gas to make plasma inside the vacuum chamber. The apparatus also includes a chamber wall. The chamber wall includes a unit which supplies plasma compatible liquid to the plasma-exposed surface of the chamber wall. The plasma compatible liquid flows along the plasma-exposed surface, thereby forming a protective liquid layer which flows on the plasma-exposed surface. The apparatus includes a liquid supply part which transfers the plasma compatible liquid to the chamber wall.</p> |
