发明名称 WIRING STRUCTURE AND FORMATION METHOD THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To improve the high frequency characteristics compared with the wiring structure by a conventional plating method.SOLUTION: A wiring structure includes a first metal layer 2 becoming a seed layer formed on an interlayer insulating film 1, and a second metal layer 3 formed on the first metal layer 2 and interlayer insulating film 1 so as to cover the first metal layer 2. The width of the second metal layer 3 is wider than that of the first metal layer 2, and the conductivity of the second metal layer 3 is higher than that of the first metal layer 2.</p>
申请公布号 JP2014236177(A) 申请公布日期 2014.12.15
申请号 JP20130118659 申请日期 2013.06.05
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 MATSUZAKI HIDEAKI;KOSUGI TOSHIHIKO
分类号 H01L21/3205;H01L21/768;H01L21/822;H01L23/532;H01L27/04 主分类号 H01L21/3205
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