发明名称 |
WIRING STRUCTURE AND FORMATION METHOD THEREOF |
摘要 |
<p>PROBLEM TO BE SOLVED: To improve the high frequency characteristics compared with the wiring structure by a conventional plating method.SOLUTION: A wiring structure includes a first metal layer 2 becoming a seed layer formed on an interlayer insulating film 1, and a second metal layer 3 formed on the first metal layer 2 and interlayer insulating film 1 so as to cover the first metal layer 2. The width of the second metal layer 3 is wider than that of the first metal layer 2, and the conductivity of the second metal layer 3 is higher than that of the first metal layer 2.</p> |
申请公布号 |
JP2014236177(A) |
申请公布日期 |
2014.12.15 |
申请号 |
JP20130118659 |
申请日期 |
2013.06.05 |
申请人 |
NIPPON TELEGR & TELEPH CORP <NTT> |
发明人 |
MATSUZAKI HIDEAKI;KOSUGI TOSHIHIKO |
分类号 |
H01L21/3205;H01L21/768;H01L21/822;H01L23/532;H01L27/04 |
主分类号 |
H01L21/3205 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|