发明名称 |
SEMICONDUCTOR LAMINATE AND METHOD FOR MANUFACTURING SAME, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, DOPANT COMPOSITION, DOPANT INJECTION LAYER, AND METHOD FOR FORMING DOPED LAYER |
摘要 |
<p>A first aspect of the present invention provides a method for producing a semiconductor laminate comprising a substrate having formed thereon a silicon layer with small surface unevenness and high continuity. The method of the first aspect of the present invention for producing a semiconductor laminate having a substrate 10 and a sintered silicon particle layer 5 on the substrate comprises (a) coating a silicon particle dispersion containing a dispersion medium and silicon particles dispersed in the dispersion medium, on a substrate 10 to form a silicon particle dispersion layer 1, (b) drying the silicon particle dispersion layer 1 to form a green silicon particle layer 2, (c) stacking a light-transmitting layer 3 on the green silicon particle layer, and (d) irradiating the green silicon particle layer 2 with light through the light-transmitting layer 3 to sinter the silicon particles constituting the green silicon particle layer 2, and thereby form a sintered silicon particle layer 5.</p> |
申请公布号 |
KR20140142690(A) |
申请公布日期 |
2014.12.12 |
申请号 |
KR20147016618 |
申请日期 |
2013.03.29 |
申请人 |
TEIJIN LIMITED |
发明人 |
IMAMURA TETSUYA;TOMIZAWA YUKA;IKEDA YOSHINORI |
分类号 |
H01L21/20;H01L21/208;H01L21/225;H01L21/336;H01L29/786;H01L31/04 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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