LOW DEFECTIVE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要
<p>Disclosed are a low defective semiconductor device and a method of manufacturing the same. The method of manufacturing the semiconductor device includes forming a buffer layer on a silicon substrate, forming an interface control layer which has a first growth condition on the buffer layer, and forming a nitride laminate which has a second growth condition different from the first growth condition on the interface control layer.</p>
申请公布号
KR20140142670(A)
申请公布日期
2014.12.12
申请号
KR20140067519
申请日期
2014.06.03
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
TAK, YOUNG JO;KIM, JAE KYUN;KIM, JOO SUNG;KIM, JUN YOUN;PARK, YOUNG SOO;LEE, EUN HA