| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a crystal growth apparatus capable of equalizing a circumferential directional intensity distribution of each laser light beam without requiring a plurality of laser light sources.SOLUTION: There is provided a single crystal growth apparatus that grows a single crystal by irradiating a heated part of a columnar sample S with heating laser light L from a direction orthogonal to the sample when viewed from an axial direction of the sample S. A plurality of laser light sources which emit the heating laser light L are arranged along a circumferential direction of the sample. The laser light L that the sample S is irradiated with from each laser light source has a predetermined width W. The single crystal growth apparatus is provided with intensity adjustment means of making the laser intensity of the laser light L higher on an irradiation width-directional end side than at an irradiation width-directional center part.</p> |
