发明名称 |
PROCESS FOR PRODUCING AT LEAST ONE THROUGH-SILICON VIA WITH IMPROVED HEAT DISSIPATION, AND CORRESPONDING THREE-DIMENSIONAL INTEGRATED STRUCTURE |
摘要 |
A method for producing at least one through-silicon via inside a substrate may include forming a cavity in the substrate from a first side of the substrate until an electrically conductive portion is emerged onto. The method may also include forming an electrically conductive layer at a bottom and on walls of the cavity, and at least partly on a first side outside the cavity. The process may further include at least partially filling the cavity with at least one phase-change material. Another aspect is directed to a three-dimensional integrated structure. |
申请公布号 |
US2014361440(A1) |
申请公布日期 |
2014.12.11 |
申请号 |
US201414287343 |
申请日期 |
2014.05.27 |
申请人 |
STMicroelectronics SA ;STMicroelectronics (Crolles 2) SAS |
发明人 |
BAR PIERRE;GOUSSEAU Simon;BEILLIARD Yann |
分类号 |
H01L23/373;H01L23/48;H01L21/768 |
主分类号 |
H01L23/373 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Montrouge FR |