| 发明名称 |
SEMICONDUCTOR DEVICE MANUFACTURING METHOD, STORAGE MEDIUM AND SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor device manufacturing method includes forming a second conductive layer on an underlying layer which has an insulating layer in which a recess is formed and a first conductive layer exposed on a bottom surface of the recess; forming a third conductive layer on the second conductive layer; supplying, into the third conductive layer, a material solid-soluble in the third conductive layer; and heating the third conductive layer into which the solid-soluble material is supplied. |
| 申请公布号 |
US2014361436(A1) |
申请公布日期 |
2014.12.11 |
| 申请号 |
US201414464875 |
申请日期 |
2014.08.21 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
Matsumoto Kenji;Hamada Tatsufumi |
| 分类号 |
H01L23/532;H01L21/768 |
主分类号 |
H01L23/532 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device manufacturing method, comprising:
forming a second conductive layer on an underlying layer which has an insulating layer in which a recess is formed and a first conductive layer exposed on a bottom surface of the recess; forming a third conductive layer on the second conductive layer; supplying, into the third conductive layer, a material solid-soluble in the third conductive layer; and heating the third conductive layer into which the solid-soluble material is supplied. |
| 地址 |
Tokyo JP |
