GAS SUPPLY METHOD FOR SEMICONDUCTOR MANUFACTURING APPARATUS, GAS SUPPLY SYSTEM, AND SEMICONDUCTOR MANUFACTURING APPARATUS

摘要

A gas supply method includes controlling communication between first and second gas pipes and a diffusion chamber using first and second valves; controlling discharge of gas within the first and second gas pipes using third and fourth valves connected upstream from the first and second valves; and controlling communication between an exhaust pipe and the diffusion chamber using a fifth valve. The gas supply method further includes a first pressurization step of closing the first valve and the third valve before starting a first step and pressurizing a first gas within the first gas pipe; a second pressurization step of closing the second valve and the fourth valve before starting a second step and pressurizing a second gas within the second gas pipe; and an exhaust step of opening the fifth valve upon starting the first step and the second step, and discharging gas within the diffusion chamber.

主权项

1. A gas supply method for a semiconductor manufacturing apparatus that alternately repeats a first step of performing a plasma process on a workpiece by supplying a first gas into a chamber via a first gas pipe and a diffusion chamber, and a second step of performing a plasma process on the workpiece by supplying a second gas into the chamber via a second gas supply pipe and the diffusion chamber, the gas supply method comprising the steps of:
controlling communication between the first gas pipe and a diffusion chamber using a first valve; controlling communication between the second gas pipe and the diffusion chamber using a second valve; controlling discharge of gas within the first gas pipe using a third valve connected upstream from the first valve of the first gas pipe; controlling discharge of gas within the second gas pipe using a fourth valve connected upstream from the second valve of the second gas pipe; controlling communication between an exhaust pipe and the diffusion chamber using a fifth valve; a first pressurization step of closing the first valve and closing the third valve before starting the first step, and increasing a pressure within the first gas pipe by the first gas; a second pressurization step of closing the second valve and closing the fourth valve before starting the second step, and increasing a pressure within the second gas pipe by the second gas; and an exhaust step of opening the fifth valve in response to a start of the first step and a start of the second step, and discharging gas within the diffusion chamber.