| 发明名称 |
PROCESSES FOR PRODUCING SUBSTRATE FOR LIQUID EJECTION HEAD |
| 摘要 |
A process for producing a substrate for a liquid ejection head, including a step of forming a liquid supply port passing through a silicon substrate by dry etching, the step being a step of sequentially repeating the steps of (1) forming an etching protection film on the silicon substrate, (2) removing a bottom portion of the etching protection film, and (3) etching the silicon substrate, wherein a sheath formed in the step (2) is thicker than a sheath formed in the step (3). |
| 申请公布号 |
US2014363907(A1) |
申请公布日期 |
2014.12.11 |
| 申请号 |
US201414283480 |
申请日期 |
2014.05.21 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
Sakai Toshiyasu;Kato Masataka;Kumamaru Kenji |
| 分类号 |
B41J2/16 |
主分类号 |
B41J2/16 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A process for producing a substrate for a liquid ejection head, comprising a step of forming a liquid supply port passing through a silicon substrate by dry etching, the step being a step of sequentially repeating the steps of:
(1) forming an etching protection film on the silicon substrate, (2) removing a bottom portion of the etching protection film, and (3) etching the silicon substrate, wherein a sheath formed in the step (2) is thicker than a sheath formed in the step (3). |
| 地址 |
Tokyo JP |
