发明名称 |
METHOD FOR BLOCK-ERASING A PAGE-ERASABLE EEPROM-TYPE MEMORY |
摘要 |
A method for erasing a page-erasable EEPROM-type memory includes: the memory receiving a command associated with a set of addresses of pages of the memory to be erased, each page comprising several memory cell groups each forming a word, for each address of the set of addresses, selecting a word line corresponding to a page of the memory, and triggering the simultaneous erasing of all the selected word lines. |
申请公布号 |
US2014362640(A1) |
申请公布日期 |
2014.12.11 |
申请号 |
US201414293860 |
申请日期 |
2014.06.02 |
申请人 |
STMicroelectronics (Rousset) SAS |
发明人 |
Tailliet Francois |
分类号 |
G11C16/14 |
主分类号 |
G11C16/14 |
代理机构 |
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代理人 |
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主权项 |
1. A method, comprising:
receiving at a page-erasable EEPROM memory an erase command associated with a set of addresses of pages of the memory to be erased, each page including plural groups of memory cells, each group forming a hardware word, the memory including a plurality of word lines corresponding respectively to the pages; selecting word lines respectively corresponding to the addresses of the set; and concurrently erasing all the selected word lines. |
地址 |
Rousset FR |