发明名称 METHOD FOR BLOCK-ERASING A PAGE-ERASABLE EEPROM-TYPE MEMORY
摘要 A method for erasing a page-erasable EEPROM-type memory includes: the memory receiving a command associated with a set of addresses of pages of the memory to be erased, each page comprising several memory cell groups each forming a word, for each address of the set of addresses, selecting a word line corresponding to a page of the memory, and triggering the simultaneous erasing of all the selected word lines.
申请公布号 US2014362640(A1) 申请公布日期 2014.12.11
申请号 US201414293860 申请日期 2014.06.02
申请人 STMicroelectronics (Rousset) SAS 发明人 Tailliet Francois
分类号 G11C16/14 主分类号 G11C16/14
代理机构 代理人
主权项 1. A method, comprising: receiving at a page-erasable EEPROM memory an erase command associated with a set of addresses of pages of the memory to be erased, each page including plural groups of memory cells, each group forming a hardware word, the memory including a plurality of word lines corresponding respectively to the pages; selecting word lines respectively corresponding to the addresses of the set; and concurrently erasing all the selected word lines.
地址 Rousset FR