发明名称 METHOD FOR IMPROVING BANDWIDTH IN STACKED MEMORY DEVICES
摘要 Apparatus and methods of increasing the data rate and bandwidth of system memory including stacked memory device dice. The system memory includes a memory device having a plurality of memory device dice in a stacked configuration, a memory controller coupled to the stacked memory device dice, and a partitioned data bus. The memory device dice each include one, two, or more groups of memory banks. By configuring each memory device die to deliver all of its bandwidth over a different single partition of the data channel, the system memory can achieve an increased data rate and bandwidth without significantly increasing costs over typical system memory configurations that include stacked memory device dice.
申请公布号 US2014362630(A1) 申请公布日期 2014.12.11
申请号 US201313913628 申请日期 2013.06.10
申请人 Vogt Peter D. 发明人 Vogt Peter D.
分类号 G11C5/06 主分类号 G11C5/06
代理机构 代理人
主权项 1. A stacked memory device, comprising: at least a first data channel and a second data channel; at least a first memory device die and a second memory device die, the first memory device die being stacked onto the second memory device die, each of the first and second memory device dice including at least a first memory bank and a second memory bank, and at least a first data channel portion and a second data channel portion; and at least a first die-to-die connection and a second die-to-die connection, the first die-to-die connection being operative to connect the respective first data channel portions included in the first and second memory device dice to form the first data channel, the second die-to-die connection being operative to connect the respective second data channel portions included in the first and second memory device dice to form the second data channel, wherein each of the so formed first and second data channels is selectively coupleable to the first memory bank and the second memory bank included in the first memory device die, and selectively coupleable to the first memory bank and the second memory bank included in the second memory device die, and wherein the first and second memory banks included in the first memory device die are each operative to provide data to a first one of the so formed first and second data channels, and the first and second memory banks included in the second memory device die are each operative to provide data to a second one of the so formed first and second data channels.
地址 Boulder CO US