ZNO FILM STRUCTURE AND METHOD OF FORMING THE SAME

摘要

Disclosed are a ZnO thin film structure and a method of manufacturing the same. The dislocation density of a ZnO thin film grown by ELOG is minimized. In ELOG growth, the material of a mask layer includes AlF3, NaF2, SrF2, or MgF2 to prevent a chemical reaction with the mask layer. Therefore, the chemical reaction of ZnO with the mask layer is prevented. The transition of dislocations from a substrate is prevented.