A method of hydrogenation of a silicon photovoltaic junction device is provided, the silicon photovoltaic junction device comprising p-type silicon semiconductor material and n-type silicon semiconductor material forming at least one p-n junction. The method comprises: i) ensuring that any silicon surface phosphorus diffused layers through which hydrogen must diffuse have peak doping concentrations of 1 x 10
申请公布号
AU2013266009(A1)
申请公布日期
2014.12.11
申请号
AU20130266009
申请日期
2013.05.20
申请人
NEWSOUTH INNOVATIONS PTY LIMITED
发明人
WENHAM, STUART ROSS;HAMER, PHILLIP GEORGE;HALLAM, BRETT JASON;SUGIANTO, ADELINE;CHAN, CATHERINE EMILY;SONG, LIHUI;LU, PEI-HSUAN;WENHAM, ALISON MAREE;MAI, LY;CHONG, CHEE MUN;XU, GUANGQI;EDWARDS, MATTHEW BRUCE