Method for Producing a Group III Nitride Semiconductor Crystal and Method for Producing a GaN Substrate

摘要

The present invention provides a method for producing a Group III nitride semiconductor crystal and a GaN substrate, in which the transfer of dislocation density or the occurrence of cracks can be certainly reduced on a growth substrate, and the Group III nitride semiconductor crystal can be easily separated from a seed crystal. A mask layer is formed on a GaN substrate, to thereby form an exposed portion of the GaN substrate, and an unexposed portion of the GaN substrate. Through a flux method, a GaN layer is formed on the exposed portions of the GaN substrate in a molten mixture containing at least Group III metal and Na. At that time, non-crystal portions containing the components of the molten mixture are formed on the mask layer so as to be covered with the GaN layer grown on the GaN substrate and the mask layer.

主权项

1. A method for producing a Group III nitride semiconductor crystal, the method comprising:
forming a mask layer on an underlayer, to thereby form an exposed portion of the underlayer which is not covered with the mask layer, and an unexposed portion of the underlayer which is covered with the mask layer; growing a Group III nitride semiconductor crystal on the exposed portion of the underlayer in a molten mixture containing at least Group III metal and Na; and wherein, in growing a Group III nitride semiconductor crystal, the Group III nitride semiconductor crystal is grown on the exposed portion of the underlayer in; and non-crystal portions containing the components of the molten mixture are formed on the mask layer.