| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing graphene with which it is possible to increase the domain size of graphene.SOLUTION: In a plasma CVD film formation device (10), a catalyst metal layer (55) formed on a wafer (W) is activated and changed into an activated catalyst metal layer (56), CHgas, which is a carbon-containing gas with low reactivity, is decomposed by a plasma in a space (S2) that opposes the wafer (W), and further, CHgas, which is a carbon-containing gas with high reactivity, is decomposed by heat in the space (S2). |
