发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device, including: a semiconductor layer; a first conductive layer formed above the semiconductor layer and having a first width; a second conductive layer connected to the first conductive layer and having a second width which is smaller than the first width; an interlayer dielectric formed above the first conductive layer and the second conductive layer; and an electrode pad formed above the interlayer dielectric. A connection section at which the first conductive layer and the second conductive layer are connected is disposed in a specific region positioned inward from a line extending vertically downward from an edge of the electrode pad; and a reinforcing section is provided at the connection section. |
申请公布号 |
US2014361433(A1) |
申请公布日期 |
2014.12.11 |
申请号 |
US201414467548 |
申请日期 |
2014.08.25 |
申请人 |
Seiko Epson Corporation |
发明人 |
YUZAWA Takeshi;TAGAKI Masatoshi |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor device, comprising:
a semiconductor layer; a first conductive layer formed above the semiconductor layer and having a first width; a second conductive layer connected to the first conductive layer and having a second width which is smaller than the first width; an interlayer dielectric formed above the first conductive layer and the second conductive layer; an electrode pad formed above the interlayer dielectric, a passivation layer formed above the electrode pad and having an opening which exposes at least part of the electrode pad; and a bump formed in the opening, a connection section at which the first conductive layer and the second conductive layer are connected being disposed in a specific region positioned inward and outward from a line extending vertically downward from an edge of at least part of the bump; and a reinforcing section being provided at the connection section. |
地址 |
Tokyo JP |