METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

In one embodiment, a method includes forming workpiece, first and second films on a substrate, processing the second films to form first and second core patterns, forming third and fourth sidewall patterns on side surfaces of the first and second core patterns via first and second sidewall patterns, and removing the first core patterns and first sidewall patterns so that the second core pattern and second to fourth sidewall patterns remain. The method includes processing the first films by transferring the second core pattern and second to fourth sidewall patterns to form third and fourth core patterns, forming fifth and sixth sidewall patterns on side surfaces of the third and fourth core patterns, removing the third core patterns so that the fourth core pattern and fifth and sixth sidewall patterns remain, and processing the workpiece film by transferring the fourth core pattern and fifth and sixth sidewall patterns.

主权项

1. A method of manufacturing a semiconductor device, comprising:
sequentially forming a workpiece film, a first sacrificial film, a first protective film, a second sacrificial film and a second protective film on a substrate; processing the second protective film and the second sacrificial film to form first core material patterns having a first width and a second core material pattern having a second width larger than the first width; forming first and second sidewall patterns formed of a first sidewall material on side surfaces of the first and second core material patterns, respectively; forming third and fourth sidewall patterns formed of a second sidewall material on the side surfaces of the first and second core material patterns via the first and second sidewall patterns, respectively; removing the first core material patterns and the first sidewall patterns so that the second core material pattern and the second, third and fourth sidewall patterns remain; processing the first protective film and the first sacrificial film by transferring the second core material pattern and the second, third and fourth sidewall patterns by etching to form third core material patterns having a third width and a fourth core material pattern having a fourth width larger than the third width; forming fifth and sixth sidewall patterns formed of a third sidewall material on side surfaces of the third and fourth core material patterns, respectively; removing the third core material patterns so that the fourth core material pattern and the fifth and sixth sidewall patterns remain; and processing the workpiece film by transferring the fourth core material pattern and the fifth and sixth sidewall patterns by etching.