发明名称 SHORT-CIRCUIT PROTECTION STRUCTURE
摘要 A short-circuit protection structure comprises first and second high-voltage transistors, a control circuit, a first current sampling resistor for the first transistor and a second current sampling resistor for the second transistor. The control circuit controls switching period and duty cycle of the first transistor and the second transistor, a drain terminal of the first transistor is connected to a drain terminal of the second transistor, a source terminal of the first transistor is connected to the first current sampling resistor, and a source terminal of the second transistor is connected to the second current sampling resistor; a gate terminal of the first transistor and a gate terminal of the second transistor are connected to a driver stage of the control circuit. The size of the second transistor is smaller than the first transistor, and the current of the first transistor is sampled by the second transistor.
申请公布号 US2014362488(A1) 申请公布日期 2014.12.11
申请号 US201414226719 申请日期 2014.03.26
申请人 Suzhou Poweron IC Design Co., Ltd 发明人 TAO Ping;Li Haisong;Zhuang Hualong;Yi Yangbo
分类号 H02H3/08 主分类号 H02H3/08
代理机构 代理人
主权项 1. A short-circuit protection structure, comprising a first transistor, a second transistor, a control circuit, a first current sampling resistor for the first transistor and a second current sampling resistor for the second transistor, wherein, said control circuit controls switching time and duty cycles of said first transistor and said second transistor; current of said first transistor is sampled by said second transistor; a drain terminal of said first transistor is connected to a drain terminal of said second transistor, a source terminal of said first transistor is connected to the first current sampling resistor and a source terminal of said second transistor is connected to the second current sampling resistor; a gate terminal of said first transistor and a gate terminal of said second transistor are connected to a driver stage of said control circuit, both said first transistor and said second transistor are high voltage transistors; and a size of said second transistor is smaller than a size of said first transistor.
地址 Suzhou City CN