SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

This silicon carbide semiconductor device is provided with a vertical MOSFET including: a semiconductor substrate having a high-concentration impurity layer (1) and a drift layer (2); a base region (3); a source region (4); a trench gate structure; a source electrode (9); and a drain electrode (10). In the base region, a high-concentration base region (3a) and a low-concentration base region (3b) having a lower second conductivity-type impurity concentration than the high-concentration base region are laminated. The high-concentration base region and the low-concentration base region are in contact with the side surfaces of the trench.