| 摘要 |
Reactive sputtering, wherein a compound thin film having a stable film quality is obtained at a high film-forming speed. The thin film is formed by voltage monitoring control (VC) and gas flow rate monitoring control (QC1). The voltage monitoring control (VC) is control in which, in a first cycle time (tv), a subject voltage (V) is monitored, whereby the gas flow rate (Q) is adjusted so that the subject voltage (V) value approaches a target voltage (Vt) value. The gas flow rate monitoring control (QC1) is control in which, in a second cycle time (tq1 (> tv)), the gas flow rate (Q) is monitored, whereby the target voltage (Vt) for the subject voltage (V) is changed so that the gas flow rate (Q) value approaches a target gas flow rate (Qt) value. |
