发明名称 VOLATILE MEMORY DEVICE AND SENSE AMPLIFIEF CONTROL METHOD THEREOF
摘要 <p>A refreshing method of a nonvolatile memory device according to the present invention includes the steps of: detecting the size of interference on a second memory region according to the increase of the number of accesses to a first memory region; outputting a warning signal to the outside of the nonvolatile memory device if the detected size of the interference reaches a critical value; and performing a refresh operation of the second memory region.</p>
申请公布号 KR20140141783(A) 申请公布日期 2014.12.11
申请号 KR20130061979 申请日期 2013.05.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YOUN, JAE YOUN;KIM, SU A;PARK, CHUL WOO;SOHN, YOUNG SOO
分类号 G11C11/401;G11C11/402;G11C11/403 主分类号 G11C11/401
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