发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To allow use of an electrode cheaper than Au.SOLUTION: A semiconductor device comprises: a first titanium layer which is a layer formed to cover at least a part of a semiconductor layer and formed by titanium; an aluminum layer which is a layer formed on the opposite side to the semiconductor layer across the first titanium layer and consists primarily of aluminum; a titanium nitride layer which is a layer formed on the opposite side to the first titanium layer across the aluminum layer and formed by titanium nitride; and an electrode layer which is a layer formed on the opposite side to the aluminum layer across the titanium nitride layer and formed by silver.
申请公布号 JP2014232859(A) 申请公布日期 2014.12.11
申请号 JP20130224206 申请日期 2013.10.29
申请人 TOYODA GOSEI CO LTD 发明人 MURAKAMI TOMOAKI;OKA TORU
分类号 H01L21/28;H01L21/285 主分类号 H01L21/28
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