发明名称 MEMORY CIRCUIT
摘要 PROBLEM TO BE SOLVED: To stabilize the voltage of power source line or the like.SOLUTION: A word line driver 33 supplies a control voltage VPX or a control voltage XDS to a word line WL1 in accordance with a word line selection signal WSEL. The word line driver 33 operates with the control voltages VPX and XDS as operation voltages. A capacitance connection circuit 32 is connected to a floating gate DFG of a dummy cell DC. The capacitance connection circuit 32 is connected to a node N1 between a sector selection circuit 31 and the word line driver 33. The capacitance connection circuits 32 connects and separates the floating gate DFG of the dummy cell DC to/from the node N1 in accordance with an operation mode.
申请公布号 JP2014232557(A) 申请公布日期 2014.12.11
申请号 JP20130113039 申请日期 2013.05.29
申请人 SPANSION LLC 发明人 TAKAHASHI MOTOI
分类号 G11C16/06;G11C16/04;H01L21/8247;H01L27/10;H01L27/115 主分类号 G11C16/06
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