| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide good electric characteristics to a semiconductor device using an oxide semiconductor; and inhibit variation in electric characteristics of a semiconductor device using an oxide semiconductor to achieve high reliability.SOLUTION: A semiconductor device comprises: an island-like semiconductor layer on a base insulation layer; a pair of electrodes on the semiconductor layer; a barrier layer contacting a lower surface of the electrodes; a gate electrode on the semiconductor layer; and a gate insulation layer between the semiconductor layer and the gate electrode. The semiconductor layer includes an oxide semiconductor. The base insulation layer contains silicon oxide or silicon oxynitride. The electrode contains Al, Cr, Cu, Ta, Ti, Mo or W. The barrier layer includes an oxide containing one and more metal elements contained in the oxide semiconductor. The electrode and the barrier layer extend to outside the semiconductor layer when viewed from a top face.</p> |
