发明名称 WIRING SUBSTRATE AND MANUFACTURING METHOD OF WIRING SUBSTRATE
摘要 A wiring substrate includes a core, first and second wiring layers formed on opposite sides of the core, an electronic component arranged in a cavity of the core, and a first insulating layer that fills the cavity and covers the one surface of the core. The electronic component is partially buried in the first insulating layer and partially projected from the cavity and exposed from the first insulating layer. A second insulating layer covers the first insulating layer. A third insulating layer covers the core and the projected and exposed portion of the electronic component. The thickness of the third insulating layer where the first wiring layer is located is equal to the total thickness of the first insulating layer and the second insulating layer where the second wiring layer is located.
申请公布号 US2014360765(A1) 申请公布日期 2014.12.11
申请号 US201414291367 申请日期 2014.05.30
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 KIWANAMI Takayuki;SATO Junji;FUKASE Katsuya
分类号 H05K1/18 主分类号 H05K1/18
代理机构 代理人
主权项 1. A wiring substrate comprising: a core including a first surface, a second surface, and a cavity, wherein the second surface is located at an opposite side of the first surface, and the cavity includes a first opening and a second opening in the first surface and the second surface, respectively; a first wiring layer formed on the first surface of the core; a second wiring layer formed on the second surface of the core; an electronic component arranged in the cavity; a first insulating layer that fills the cavity and covers the second surface of the core, wherein the electronic component is partially buried in the first insulating layer, and the electronic component includes a portion projected from the first opening of the cavity and exposed from the first insulating layer; a second insulating layer that covers the first insulating layer; a third insulating layer that covers the first surface of the core and the projected and exposed portion of the electronic component; a first via wire that extends through the third insulating layer; a third wiring layer formed on the third insulating layer and electrically connected to the electronic component through the first via wire; a second via wire that extends through the second insulating layer and the first insulating layer; and a fourth wiring layer formed on the second insulating layer and electrically connected to the second wiring layer through the second via wire; wherein a thickness of the third insulating layer over the first wiring layer is equal to a total thickness of the first insulating layer and the second insulating layer over the second wiring layer.
地址 Nagano-ken JP