SEMICONDUCTOR DEVICE

摘要

In aspects of the invention, SiC reverse blocking MOSFET includes an active region including a MOS gate structure and a breakdown voltage structure portion surrounding the outer circumference of the active region, which are provided on the surface side of a SiC-n− drift layer that is grown on one main surface of a p+ SiC substrate. A p-type isolation region is provided on the side surface of the SiC-n− drift layer so as to surround the outer circumference of the breakdown voltage structure portion and to extend from the front surface of the SiC-n− drift layer to the p+ SiC substrate. A concave portion which reaches the SiC-n− drift layer through the p+ SiC substrate and has a bottom area corresponding to the area of the active region is provided in a region of the other main surface of the p+ SiC substrate which is opposite to the active region.

主权项

1. A semiconductor device comprising:
a first-conductivity-type semiconductor layer that is made of a semiconductor material with a wider band gap than silicon and is grown on one main surface of a semiconductor substrate of a second conductivity type; an active region that is formed on a surface of the first-conductivity-type semiconductor layer opposite to the semiconductor substrate and includes an insulated gate structure; a breakdown voltage structure portion that surrounds the outer circumference of the active region; a concave portion that is provided in a region of the other main surface of the semiconductor substrate, which is opposite to the active region, at a depth that reaches the first-conductivity-type semiconductor layer through the semiconductor substrate and has an area corresponding to the area of the active region; and a metal film that is provided along an inner wall of the concave portion and comes into contact with the first-conductivity-type semiconductor layer on the bottom of the concave portion to form a Schottky junction.