发明名称 |
PERPENDICULAR MAGNETIZATION WITH OXIDE INTERFACE |
摘要 |
A mechanism is provided for a structure with perpendicular magnetic anisotropy. A bottom oxide layer is disposed, and a magnetic layer is disposed adjacent to the bottom oxide layer. The magnetic layer includes iron and is magnetized perpendicularly to a plane of the magnetic layer. A top oxide layer is disposed adjacent to the magnetic layer. |
申请公布号 |
US2014363701(A1) |
申请公布日期 |
2014.12.11 |
申请号 |
US201313911609 |
申请日期 |
2013.06.06 |
申请人 |
International Business Machines Corporation |
发明人 |
Hu Guohan;Worledge Daniel |
分类号 |
G11B5/62 |
主分类号 |
G11B5/62 |
代理机构 |
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代理人 |
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主权项 |
1. A structure with perpendicular magnetic anisotropy, comprising:
a bottom oxide layer; a magnetic layer disposed on top of the bottom oxide layer, wherein the magnetic layer includes iron and is magnetized perpendicularly to a longitudinal plane of the magnetic layer; and a top oxide layer disposed on top of the magnetic layer. |
地址 |
Armonk NY US |