发明名称 |
SATURABLE ABSORBERS FOR Q-SWITCHING OF MIDDLE INFRARED LASER CAVATIES |
摘要 |
This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm−1) and low passive losses while being highly cost effective and easy to reproduce. Using these Fe2+:ZnSe crystals, stable Q-switched output was achieved with a low threshold and the best cavity configuration yielded 13 mJ/pulse single mode Q-switched output and 85 mJ in a multipulse regime. |
申请公布号 |
US2014362879(A1) |
申请公布日期 |
2014.12.11 |
申请号 |
US201414469547 |
申请日期 |
2014.08.26 |
申请人 |
The UAB Research Foundation |
发明人 |
Mirov Sergey B.;Gallian Andrew;Martinez Alan;Fedorov Vladimir V. |
分类号 |
H01S3/113;C23C14/18;B05D3/00;H01S3/16;B05D1/00 |
主分类号 |
H01S3/113 |
代理机构 |
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代理人 |
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主权项 |
1. A method performed by an Erbium or transition metal doped laser for producing laser pulses at a laser wavelength around 3 μm based on passive Q-switching at room temperature, comprising:
providing a laser cavity in the Erbium or transition metal doped laser to include a doped laser gain material to produce laser light at a laser wavelength around 3 μm under optical pumping; and using a saturable absorber inside the laser cavity to effectuate passive Q-switching in the laser light that generates laser pulses at the laser wavelength around 3 μm, where the saturable absorber is a single crystalline or polycrystalline material of Fe2+:ZnSe or Fe2+:ZnS structured to exhibit a saturable absorption at the laser wavelength around 3 μm that effectuates the passive Q-switching at room temperature. |
地址 |
Birmingham AL US |