发明名称 |
GaN Substrate, Semiconductor Device and Method for Fabricating GaN Substrate and Semiconductor Device |
摘要 |
A gallium nitride (GaN) substrate, a semiconductor device, and methods for fabricating a GaN substrate and a semiconductor device are provided. The GaN substrate includes: a GaN base; an aluminum gallium nitride (AlGaN) layer, disposed on the GaN base; and a p-type conducting layer disposed on an active area of the AlGaN layer, and used to exhaust surface state negative electrons on the AlGaN layer and neutralize a dangling bond on the AlGaN layer. The p-type conducting layer is formed on the AlGaN layer, and a hole charge carrier in the p-type conducting layer can be used to exhaust the surface state negative electrons on an n-type AlGaN layer, neutralize the dangling bond on a section of the AlGaN layer, and prevent the forming of a virtual gate, so as to suppress a current collapse effect of the semiconductor device fabricated using the GaN substrate. |
申请公布号 |
US2014361311(A1) |
申请公布日期 |
2014.12.11 |
申请号 |
US201414466295 |
申请日期 |
2014.08.22 |
申请人 |
Huawei Technologies Co., Ltd. |
发明人 |
Zhang Zhenghai;Zhang Zongmin;Cao Bocheng |
分类号 |
H01L29/778;H01L29/205;H01L21/02;H01L29/20 |
主分类号 |
H01L29/778 |
代理机构 |
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代理人 |
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主权项 |
1. A gallium nitride (GaN) substrate, comprising:
a GaN base; an aluminium gallium nitride (AlGaN) layer disposed on the GaN base; and a p-type conducting layer disposed on an active area of the AlGaN layer, wherein the p-type conducting layer is configured to exhaust surface state negative electrons on the AlGaN layer and neutralize a dangling bond on the AlGaN layer. |
地址 |
Shenzhen CN |