| 摘要 |
Provided is a method for producing a thin film, whereby it becomes possible to achieve both the reduction in concentration of carbon impurities and a high film formation speed and it also becomes possible to produce different crystal structures in accordance with the intended use steadily. According to the present invention, a method for producing an oxide crystal thin film is provided, which comprises a step of supplying raw material microparticles into a film formation chamber by the action of a carrier gas to form an oxide crystal thin film on a film formation sample placed in the film formation chamber, wherein the raw material microparticles are produced by transforming a raw material solution, which is a solution comprising a gallium compound and/or an indium compound and water, into microparticles, and wherein the gallium compound and/or the indium compound is a bromide or an iodide. |
