发明名称 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
摘要 Provided is a mask ROM which is capable of reducing the time required for the programming step and the subsequent steps (TAT) without causing an increase in the chip size. A semiconductor device which has two or more multilayer wiring layers, and wherein a contact plug (15c), which is formed uppermost among a plurality of contact plugs (15a-15c) that penetrate through interlayer insulating films (14a-14c), is composed of first contact plugs (15c1, 15c2), the upper surfaces of which are electrically connected to the uppermost wiring layer (14c), and a second contact plug (15c3) which is insulated from the uppermost wiring layer (14c) by means of an intervening thin first insulating film (19) that is formed on the upper surface of the second contact plug (15c3). The uppermost wiring layer (14c) is directly connected to the first contact plugs via an opening (20) that penetrates through the first insulating film (19), and is insulated from the second contact plug by covering the entire upper surface of the second contact plug with the first insulating film (19).
申请公布号 WO2014196286(A1) 申请公布日期 2014.12.11
申请号 WO2014JP61829 申请日期 2014.04.28
申请人 SHARP KABUSHIKI KAISHA 发明人 WAKISAKA, MASATO;OHMAE, TSUTOMU;HORIO, MASAHIRO
分类号 H01L21/8246;H01L21/768;H01L23/522;H01L27/112 主分类号 H01L21/8246
代理机构 代理人
主权项
地址