发明名称 MANUFACTURING METHOD FOR ORGANIC SEMICONDUCTOR DEVICE WITH ORGANIC ELECTRIC FIELD EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To provide a manufacturing method for an organic TFT, which method makes it possible to form an organic TFT that is uniform in the crystallinity of an organic semiconductor thin film and the degrees of movement are uniform, which can cope with a fine pattern, and which is highly efficient in terms of material.SOLUTION: An organic semiconductor material 21 is formed on a transfer substrate 20 in advance, and this is transferred between a source electrode 16 and a drain electrode 17. The direction of orientation of the crystals of the organic semiconductor material 21 is analyzed. On the basis of the result of the analysis, the direction of arrangement of the source electrode 16 and the drain electrode 17 and the direction of orientation of the crystals of the organic semiconductor material 21 are determined so as to have a desired relation. Thus, an organic TFT11 can be formed such that the crystallinity of the organic semiconductor thin film 15 is uniform and the degrees of movement are uniform. In addition, since no entrance distance for a plurality of pixels is required, a fine pattern can be formed.
申请公布号 JP2014232848(A) 申请公布日期 2014.12.11
申请号 JP20130114307 申请日期 2013.05.30
申请人 DENSO CORP 发明人 ISHIDA TAIZO;KATAYAMA MASAYUKI
分类号 H01L21/336;H01L21/28;H01L21/368;H01L29/786;H01L51/05 主分类号 H01L21/336
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