发明名称 ETCHANT AND ETCHANT KIT, ETCHING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT
摘要 PROBLEM TO BE SOLVED: To provide an etchant capable of selectively removing a layer containing a specific metal from a layer containing Ge, an etchant kit, an etching method using the same, and a method for manufacturing a semiconductor substrate product.SOLUTION: An etchant for selectively removing a second layer from a semiconductor substrate which has a first layer containing germanium (Ge) and the second layer containing a specific metal element other than germanium (Ge), and containing an organic alkali compound.
申请公布号 JP2014232871(A) 申请公布日期 2014.12.11
申请号 JP20140094835 申请日期 2014.05.01
申请人 FUJIFILM CORP 发明人 SUGISHIMA YASUO;TAKAHASHI TOMOMI;KOYAMA AKIKO;KAMIMURA TETSUYA
分类号 H01L21/308;H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/417;H01L29/78 主分类号 H01L21/308
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