发明名称 |
ETCHANT AND ETCHANT KIT, ETCHING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT |
摘要 |
PROBLEM TO BE SOLVED: To provide an etchant capable of selectively removing a layer containing a specific metal from a layer containing Ge, an etchant kit, an etching method using the same, and a method for manufacturing a semiconductor substrate product.SOLUTION: An etchant for selectively removing a second layer from a semiconductor substrate which has a first layer containing germanium (Ge) and the second layer containing a specific metal element other than germanium (Ge), and containing an organic alkali compound. |
申请公布号 |
JP2014232871(A) |
申请公布日期 |
2014.12.11 |
申请号 |
JP20140094835 |
申请日期 |
2014.05.01 |
申请人 |
FUJIFILM CORP |
发明人 |
SUGISHIMA YASUO;TAKAHASHI TOMOMI;KOYAMA AKIKO;KAMIMURA TETSUYA |
分类号 |
H01L21/308;H01L21/28;H01L21/336;H01L21/8234;H01L21/8238;H01L27/088;H01L27/092;H01L29/417;H01L29/78 |
主分类号 |
H01L21/308 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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