ETCHING METHOD, ETCHANT AND ETCHANT KIT USED FOR THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT

摘要

PROBLEM TO BE SOLVED: To provide an etching method capable of selectively removing a layer containing a specific metal from a layer containing Ge, an etchant and an etchant kit used for the same, and a method for manufacturing a semiconductor substrate product.SOLUTION: An etching method for selectively removing a second layer from a semiconductor substrate which has a first layer containing germanium (Ge) and the second layer containing at least one kind of a specific metal element selected from nickel-platinum (NiPt), titanium (Ti), nickel (Ni) and cobalt (Co), and being a semiconductor substrate etching method for removing the second layer by contacting the second layer with an etchant containing alkali compound.