发明名称 |
ZINC TARGET INCLUDING FLUORINE, METHOD OF FABRICATING ZINC NITRIDE THIN FILM BY USING THE SAME, AND METHOD OF FABRICATING THIN FILM TRANSISTOR BY USING THE SAME |
摘要 |
Provided are fluorine-containing zinc targets, methods of fabricating a zinc oxynitride thin film by using the zinc targets, and methods of fabricating a thin film transistor by using the zinc oxynitride thin film. The methods include mounting a fluorine-containing zinc target and a substrate in a sputtering chamber, supplying nitrogen gas and inert gas into the sputtering chamber, and forming a fluorine-containing zinc oxynitride thin film on the substrate. |
申请公布号 |
US2014363932(A1) |
申请公布日期 |
2014.12.11 |
申请号 |
US201414187889 |
申请日期 |
2014.02.24 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
RYU Myung-kwan;KIM Tae-sang;KIM Hyun-suk;PARK Joon-seok;PARK Young-soo |
分类号 |
H01L29/66;C23C14/34 |
主分类号 |
H01L29/66 |
代理机构 |
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代理人 |
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主权项 |
1. A fluorine-containing sputtering zinc target comprising:
a body including a mixture of zinc fluoride powder and zinc powder. |
地址 |
Suwon-Si KR |