| 发明名称 |
PHOTOELECTRODE USED FOR CARBON DIOXIDE REDUCTION AND METHOD FOR REDUCING CARBON DIOXIDE USING THE PHOTOELECTRODE |
| 摘要 |
Disclosed is an anode electrode including a nitride semiconductor layer. This nitride semiconductor layer includes an AlxGa1-xN layer (0<x≦0.25), an AlyGa1-yN layer (0≦y≦x), and a GaN layer. The AlyGa1-yN layer is interposed between the AlxGa1-xN layer and the GaN layer. The value of x is fixed in the thickness direction of the AlxGa1-xN layer. The value of y decreases from the interface with the AlxGa1-xN layer f toward the interface with the GaN layer. The AlxGa1-xN layer is irradiated with light having a wavelength of 360 nm or less so as to reduce carbon dioxide. |
| 申请公布号 |
US2014360883(A1) |
申请公布日期 |
2014.12.11 |
| 申请号 |
US201414466170 |
申请日期 |
2014.08.22 |
| 申请人 |
PANASONIC CORPORATION |
发明人 |
DEGUCHI Masahiro;YOTSUHASHI Satoshi;TANIGUCHI Reiko;HASHIBA Hiroshi;YAMADA Yuka;OHKAWA Kazuhiro |
| 分类号 |
C25B11/04;C25B1/00 |
主分类号 |
C25B11/04 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A photoelectrode used to reduce carbon dioxide by light energy, comprising a region including a nitride semiconductor layer in which a first aluminum gallium nitride layer (composition formula: AlxGa1-xN, where a value of x representing a composition ratio of Al is a fixed value that satisfies 0<x≦0.25), a second aluminum gallium nitride layer (composition formula: AlyGa1-yN, where a value of y representing a composition ratio of Al is a variable value that satisfies 0≦y≦x), and a gallium nitride layer (composition formula: GaN) are laminated in this order from a surface of the photoelectrode to be irradiated with light, wherein
the value of y in the second aluminum gallium nitride layer changes, without any increase, from an interface with the first aluminum gallium nitride layer toward an interface with the gallium nitride layer. |
| 地址 |
Osaka JP |
