GROUP 13 NITRIDE COMPOSITE SUBSTRATE, SEMICONDUCTOR ELEMENT, AND PRODUCTION METHOD FOR GROUP 13 NITRIDE COMPOSITE SUBSTRATE

摘要

Provided are a group 13 nitride composite substrate capable of providing a semiconductor element using a conductive GaN substrate and suitable for high-frequency applications; and a semiconductor element manufactured using same. The group 13 nitride composite substrate comprises: a base material comprising GaN and having n-type conductivity; an underlayer being a group 13 nitride layer having a specific resistance of at least 1 × 106 &OHgr;cm and formed upon the base material; a channel layer being a GaN layer having a total impurity concentration of no more than 1 × 1017/cm3 and formed upon the underlayer; and a barrier layer comprising a group 13 nitride having a composition comprising AlxInyGa1-x-yN (0≤x1, 0≤y≤1) and formed upon the channel layer.