| 摘要 |
Provided are: a metal nitride material for thermistors that has high heat resistance, is highly reliable, and can be formed into a film directly on, e.g., a film without firing; a method for producing said metal nitride material; and a film-type thermistor sensor. This metal nitride material used for thermistors is made of a metal nitride represented by the general formula (M1-vVv)xAly(N1-wOw)z (wherein 0.0 < v < 1.0, 0.70 ≤ y/(x+y) ≤ 0.98, 0.45 ≤ z ≤ 0.55, 0 < w ≤ 0.35, and x+y+z = 1), and has a single-phase wurtzite hexagonal crystal structure, wherein said M is Ti and/or Cr. This method for producing said metal nitride material for thermistors comprises a film formation step for forming a film by performing reactive sputtering in a nitrogen- and oxygen-containing atmosphere by using an M-V-Al alloy sputtering target, wherein said M is Ti and/or Cr. |
