ETCHANT AND ETCHANT KIT, ETCHING METHOD USING THE SAME, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE PRODUCT

摘要

PROBLEM TO BE SOLVED: To provide an etching method capable of improving the surface roughness of a layer containing Ge, and selectively removing a second layer containing a specific metal, an etchant and an etchant kit used for the same, and a method for manufacturing a semiconductor substrate product.SOLUTION: An etchant for selectively removing a second layer from a semiconductor substrate which has a first layer containing germanium (Ge) and the second layer containing a specific metal element other than germanium (Ge), and containing following specific acidic compounds (specific acidic compounds: sulfuric acid (HSO), nitrate (HNO), phosphoric acid (HPO), phosphonic acid (HPO) or organic acid).