Resistance Change Device, and Method for Producing Same

摘要

To provide a resistance change device that can be protected from an excess current without enlarging a device size. A resistance change device 1 according to the present embodiment includes a lower electrode layer 3, an upper electrode layer 6, a first metal oxide layer 51, a second metal oxide layer 52, and a current limiting layer 4. The first metal oxide layer 51 is disposed between the lower electrode layer 3 and the upper electrode layer 6, and has a first resistivity. The second metal oxide layer 52 is disposed between the first metal oxide layer 51 and the upper electrode layer 6, and has a second resistivity higher than the first resistivity. The current limiting layer 4 is disposed between the lower electrode layer 3 and the first metal oxide layer 51, and has a third resistivity higher than the first resistivity and lower than the second resistivity.

主权项

1. A resistance change device, comprising:
a first electrode; a second electrode; a first metal oxide layer having a first resistivity and being disposed between the first electrode and the second electrode; a second metal oxide layer having a second resistivity higher than the first resistivity and being disposed between the first metal oxide layer and the second electrode; and a current limiting layer having a third resistivity higher than the first resistivity and lower than the second resistivity and being disposed between the first electrode and the first metal oxide layer.