发明名称 MANUFACTURING METHOD OF SINGLE CRYSTAL WAFER
摘要 PROBLEM TO BE SOLVED: To provide a method capable of manufacturing a single crystal wafer with no notch without significantly changing a conventional manufacturing method of the single crystal wafer and without increasing a single crystal processing loss, namely, without increasing cost.SOLUTION: The manufacturing method of the single crystal wafer includes a cylindrical grinding step in which, on a side surface of a single crystal ingot, three or more notches are formed along an axial direction of the single crystal ingot, total depth of the three or more notches is made equal to or more than 1.2 mm, and one of the three or more notches indicates a crystal orientation of <011> or <001>. After a double-head grinding step, the method includes a laser marking step of engraving a mark at a predetermined position of the single crystal wafer defined by the notch indicating the crystal orientation of <011> or <001> formed on the single crystal wafer as a reference. After the laser marking step, the method includes a trimming step of removing all the three or more notches formed on the single crystal wafer, thereby manufacturing the single crystal wafer with no notch.
申请公布号 JP2014232780(A) 申请公布日期 2014.12.11
申请号 JP20130112263 申请日期 2013.05.28
申请人 SHIN ETSU HANDOTAI CO LTD 发明人 KATO TADAHIRO
分类号 H01L21/02;B24B5/04;B24B5/50;B24B7/17;B24B9/00;B24B27/06;H01L21/304 主分类号 H01L21/02
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