发明名称 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF
摘要 Provided is a thin film transistor array panel. The thin film transistor array panel includes: an insulation substrate including a display area with a plurality of pixels and a peripheral area around the display area; a gate line and a data line positioned in the display area of the insulation substrate; a first driving signal transfer line and a second driving signal transfer line positioned in the peripheral area of the insulation substrate; a first insulating layer positioned on the gate line and the data line; and a first photosensitive film positioned on the first driving signal transfer line and the second driving signal transfer line, in which the first photosensitive film is disposed only in the peripheral area.
申请公布号 US2014363961(A1) 申请公布日期 2014.12.11
申请号 US201414465420 申请日期 2014.08.21
申请人 Samsung Display Co., Ltd. 发明人 SHIN Jae-Yong;Sohn Woo-Sung;Yoon Hong Min;Yun Hui Gyeong
分类号 H01L27/12;H01L21/768;H01L21/28;H01L23/00 主分类号 H01L27/12
代理机构 代理人
主权项 1. A manufacturing method of a thin film transistor array panel, comprising: forming a gate line in a display area of a substrate and forming a first driving signal transfer line in a peripheral area of the substrate; forming a data line in the display area of the substrate and forming a second driving signal transfer line in the peripheral area of the substrate; forming a first insulating layer on the gate line and the data line; forming a photosensitive film on the first insulating layer; forming a first photosensitive film pattern disposed in the display area and a second photosensitive film pattern disposed in the peripheral area, by exposing and developing the photosensitive film; etching the first insulating layer using the first photosensitive film pattern as an etching mask; and removing the first photosensitive film pattern and decreasing a height of the second photosensitive film pattern.
地址 Yongin-city KR