| 摘要 |
<p>The present invention provides an inductive coupling plasma processing apparatus, wherein the processing apparatus divides each edge of a dielectric window portion response to a large-scale substrate to be processed into more than three segments, thereby generating strong plasmas in a processing chamber under the condition of dividing edges into more segments. The apparatus is provided with high frequency antennas (11a)-(11c) used for generating inductive coupling plasmas in the plasma generating area in the processing chamber; and a dielectric window portion (3) configured between the plasma generating area and the high frequency antennas (11a)-(11c) and comprising a plurality of inductive components (3a)-(3h) and a conductive beam (7) supporting the plurality of inductive components (3a)-(3h); wherein the conductive beam (7) divides each edge of the dielectric window portion into more than three segments, and when the conductive beam (7) divides the each side of the dielectric window portion (3) into more than three segments, a closed-loop circuit (200) generated along high frequency antennas (11a) and (11b) at the center portion of the dielectric window portion (3) can not be formed in the conductive beam (7).</p> |
