| 摘要 |
Provided is a high-purity copper-chromium alloy sputtering target comprising 0.1 to 10 wt % of Cr and the remainder being Cu and inevitable impurities, wherein when the number of precipitated Cr grains in a 100μm square area is counted at different five areas randomly selected on the surface of the target, the difference between the largest and the smallest numbers of counted precipitated Cr grains is less than 40. The term“precipitated Cr grains”refers to the grains each having a Cr content of 70% or more and having a grain size of 1 to 20μm. Thus, a thin film having excellent uniformity can be formed by adding an appropriate amount of a Cr element to copper and reducing the in-plane Cr variation of the sputtering target. In particular, the invention provides a high-purity copper-chromium alloy sputtering target that is useful for improving the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration. |
