| 摘要 |
PROBLEM TO BE SOLVED: To equalize the linewidth of a resist pattern in the plane of a substrate. SOLUTION: In the development processing method of a resist film on a wafer W where a predetermined pattern is exposed by supplying a developing solution M onto the wafer W and then performing post exposure baking, thickness of the resist film on the wafer W is measured before and after the post exposure baking. Based on the difference of thickness of the resist film measured before and after the post exposure baking, development conditions are set for each shot of the pattern on the wafer. Based on the development conditions thus set, the amount of misty developing solution M supplied and the development time are adjusted for each shot thus adjusting the linewidth of the resist pattern after development processing. COPYRIGHT: (C)2013,JPO&INPIT |
