DRY ETCHING METHOD, DRY ETCHING APPARATUS, ETCHIED METAL FILM PERFORMED ETCHING BY THE METHOD AND DEVICE HAVING THE ETCHIED METAL FILM

摘要

Improved is the etching speed of a metal layer which has the COMPLEX structure of 5 or 6 coordination orβ-diketone. The present invention is a dry etching method which etches a metal layer on a substrate by using an etching gas includingβ-diketone. The metal layer includes at least one kind of metal which forms the COMPLEX structure of 5 or 6 coordination orβ-diketone. The etching gas includingβ-diketone includes at least one kind of additive of H2O or H2O2. The volume concentration of a corresponding additive is 1% to 20%.