发明名称 Micromachined thermal mass flow sensor and manufacturing method thereof
摘要 <p>The present invention concerns a gas flowmeter comprising: a semiconductor substrate (2) including a cavity (9); an insulating film (7b) formed above said semiconductor substrate (2) so that said cavity (4) is covered with said insulating film (7b); and a heat element (4), temperature measuring resistors (5a-5d) and wiring connection portions (11c-11l) each formed on said insulating film (7b); said heat element (4), said temperature measuring resistors (5a-5d) and said wiring connection portions (11c-11l) each being an impurity-doped polycrystalline silicon semiconductor thin film (23). Said impurity-doped polycrystalline silicon semiconductor thin film (23) provides a resistivity of 8 x 10 -4 ©cm or less.</p>
申请公布号 EP2811265(A1) 申请公布日期 2014.12.10
申请号 EP20140171282 申请日期 2002.10.16
申请人 HITACHI, LTD.;HITACHI CAR ENGINEERING CO., LTD. 发明人 YAMADA, MASAMICHI;HORIE, JUNICHI;WATANABE, IZUMI;NAKADA, KEIICHI
分类号 G01F1/684;F02D35/00;G01F1/692 主分类号 G01F1/684
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