| 摘要 |
<p>One embodiment of the present invention relates to a thin film transistor array substrate capable of improving reliability. Provided is the thin film transistor array substrate which includes a substrate, a gate line which is formed on the substrate, a first gate electrode which is formed on the substrate to be branched from the gate line, a gate insulation layer which is formed on the front side of the substrate to cover the gate line and the first gate electrode, an active layer which is formed on the gate insulation layer to overlap at least part of the first gate electrode, a data line which is composed of a plurality of metal layers which include a first metal layer and a second metal layer made of Cu on the gate insulation layer and crosses the gate line, a source electrode which is composed of the remaining metal layer except the second metal layer among the metal layers on the gate insulation layer, is branched from the data line, and overlaps one side of the active layer, and a drain electrode which is composed of the remaining metal layer except the second metal layer among the metal layers on the gate insulation layer, is separated from the source electrode, and overlaps the other side of the active layer.</p> |
